industrial transfer cart for foundry environment 1-300 t
Memory Research at TSMC, page 1-Research-Taiwan
A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in T FM – M , and 99+% reduction in TW-PAGE for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. 22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options
Wafer-recyclable, environment-friendly transfer printing
31/7/2018 · Transfer Printing Process. Devic...